BQ2201数据手册集成电路（IC）的控制器规格书PDF

描述 Description

The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory. A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM. During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists. The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.

特性 Features

• Power monitoring and switching for 3-volt battery-backup applications
• Write-protect control
• 3-volt primary cell inputs
• Less than 10ns chip-enable propagation delay
• 5% or 10% supply operation