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40 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMT

文件：1.41199 Mbytes 页数：8 Pages

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40 W, 6.0 GHz, GaN HEMT Die

文件：654.58 Kbytes 页数：7 Pages

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Schottky PowerMod • Schottky Barrier Rectifier • Guard Ring Protection • 600 Amperes/35 to 45 Volts • 175°C Junction Temperature • Reverse Energy Tested • ROHS Compliant

文件：160.63 Kbytes 页数：2 Pages

MICROSEMI

美高森美