BMF011MR12E1G3资料datasheet下载行情报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
BMF011MR12E1G3	文件：2.79555 Mbytes Page：11 Pages	SiC MOSFET Module Electrical Features Low RDS(on) High current density Low inductance design Low switching losses Less susceptible to malfunction due to high threshold voltage: VGS(th).typ = 4.0V Built-in SiC schottky barrier diode Zero Reverse Recovery from Diodes Low diode forward voltage Intergrated 文件：2.79555 Mbytes 页数：11 Pages	BASICSEMI 基本半导体	BASICSEMI
BMF011MR12E1G3	文件：2.79888 Mbytes Page：11 Pages	SiC MOSFET Module Electrical Features Low RDS(on) High current density Low inductance design Low switching losses Less susceptible to malfunction due to high threshold voltage: VGS(th).typ = 4.0V Built-in SiC schottky barrier diode Zero Reverse Recovery from Diodes Low diode forward voltage Potential Ap 文件：2.79888 Mbytes 页数：11 Pages	BASICSEMI 基本半导体	BASICSEMI
BMF011MR12E1G3	文件：300 bytes Page：1 Pages	SiC MOSFET Module	BASiC 基本半导体	BASiC
BMF011MR12E1G3_V01	文件：2.79888 Mbytes Page：11 Pages	SiC MOSFET Module Electrical Features Low RDS(on) High current density Low inductance design Low switching losses Less susceptible to malfunction due to high threshold voltage: VGS(th).typ = 4.0V Built-in SiC schottky barrier diode Zero Reverse Recovery from Diodes Low diode forward voltage Potential Ap 文件：2.79888 Mbytes 页数：11 Pages	BASICSEMI 基本半导体	BASICSEMI

更多BMF011MR12E1G3供应商更新时间2026-2-5 18:03:00