丝印：BM8；Package：SMA；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W • Reverse standoff

文件：210.65 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BM8N08A；NPN SILICON TRANSISTORS

APPLICATIONS  shunt and switching regulators  output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz  low and high frequency inverters/converters FEATURES  High current capability  High reliability  RoHS product

文件：610.48 Kbytes 页数：5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：BM81810F；Package：VQFN32FBV050；Automotive Panel Power Management IC

文件：3.64331 Mbytes 页数：78 Pages

ROHM

罗姆

丝印：BM8N08A；NPN SILICON TRANSISTORS

APPLICATIONS  shunt and switching regulators  output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz  low and high frequency inverters/converters FEATURES  High current capability  High reliability  RoHS product

文件：610.48 Kbytes 页数：5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：BM81810F；Package：VQFN32FBV050；Automotive Panel Power Management IC

文件：3.64331 Mbytes 页数：78 Pages

ROHM

罗姆

丝印：8N08A；Package：SOT-223；NPN SILICON TRANSISTORS

APPLICATIONS  shunt and switching regulators  output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz  low and high frequency inverters/converters FEATURES  High current capability  High reliability  RoHS product

文件：610.48 Kbytes 页数：5 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

BM83 Bluetooth® Stereo Audio Module Data Sheet

Features • Qualified for Bluetooth v5.0 Specification: – HFP 1.7, HSP 1.2, A2DP 1.3, SPP 1.2, AVRCP 1.6, and PBAP 1.2 – Bluetooth classic (BR/EDR) and Bluetooth Low Energy – General Attribute Profile (GATT) and General Access Profile (GAP) – Bluetooth Low Energy Data Length Extension (DLE) an

文件：5.09098 Mbytes 页数：76 Pages

Microchip

微芯科技

Microchip Technology [MICROCHIP]^97

Features • Qualified for Bluetooth v5.0 Specification: – HFP 1.7, HSP 1.2, A2DP 1.3, SPP 1.2, AVRCP 1.6, and PBAP 1.2 – Bluetooth classic (BR/EDR) and Bluetooth Low Energy – General Attribute Profile (GATT) and General Access Profile (GAP) – Bluetooth Low Energy Data Length Extension (DLE) an

文件：5.09095 Mbytes 页数：76 Pages

Microchip

微芯科技

Microchip Technology [MICROCHIP]^97

Features • Qualified for Bluetooth v5.0 Specification: – HFP 1.7, HSP 1.2, A2DP 1.3, SPP 1.2, AVRCP 1.6, and PBAP 1.2 – Bluetooth classic (BR/EDR) and Bluetooth Low Energy – General Attribute Profile (GATT) and General Access Profile (GAP) – Bluetooth Low Energy Data Length Extension (DLE) an

文件：5.09095 Mbytes 页数：76 Pages

Microchip

微芯科技

Microchip Technology [MICROCHIP]^97

Features • Qualified for Bluetooth v5.0 Specification: – HFP 1.7, HSP 1.2, A2DP 1.3, SPP 1.2, AVRCP 1.6, and PBAP 1.2 – Bluetooth classic (BR/EDR) and Bluetooth Low Energy – General Attribute Profile (GATT) and General Access Profile (GAP) – Bluetooth Low Energy Data Length Extension (DLE) an

文件：5.09095 Mbytes 页数：76 Pages

Microchip

微芯科技