BLU6H0410LS-600P分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

BLU6H0410LS-600P属于分立半导体产品的晶体管-FETMOSFET-射频。由安谱隆制造生产的BLU6H0410LS-600P晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

General description

A 600 W LDMOS RF power transistor for radar transmitter applications and industrial

applications in the frequency range of 400 MHz to 900 MHz.

Features and benefits

 Excellent ruggedness (VSWR  40 : 1 through all phases)

 Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

 High power gain

 High efficiency

 Internal input matching for high gain and optimum broadband operation

 Excellent reliability

 Easy power control

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 Power amplifier for radar transmitter applications in the 400 MHz to 900 MHz

frequency range