BLS3135-65

Microwavepowertransistor

DESCRIPTION NPNsiliconplanarepitaxialmicrowavepowertransistorina2-leadrectangularflangepackagewithaceramiccap(SOT422A)withthecommonbaseconnectedtotheflange. FEATURES •Suitableforshortandmediumpulseapplications •Internalinputandoutputmatchingnetworksforan

PH3135-65M

RadarPulsedPowerTransistor,65Watts,3.10-3.50GHz,100usPulse,10Duty

Features ■NPNSiliconMicrowavePowerTransistor ■CommonBaseConfiguration ■BroadbandClassCOperation ■HighEfficiencyInterdigitatedGeometry ■GoldMetalizationSystem ■InternalInputandOutputImpedanceMatching ■HermeticMetal/CeramicPackage

PH3135-65M

RadarPulsedPowerTransistor65W,3.1-3.5GHz,100關sPulse,10Duty

Features •NPNsiliconmicrowavepowertransistors •Commonbaseconfiguration •BroadbandClassCoperation •Highefficiencyinter-digitizedgeometry •Diffusedemitterballastingresistors •Goldmetallizationsystem •Internalinputandoutputimpedancematching •Hermeticmetal/cerami

PH3135-65M

RadarPulsedPowerTransistor