Microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange. FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an

文件：69.85 Kbytes 页数：12 Pages

PHI

PHI

Microwave power transistor

恩XP

Radar Pulsed Power Transistor

文件：108.01 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor 20W, 3.1-3.5 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

文件：108.01 Kbytes 页数：3 Pages

MA-COM

Radar Pulsed Power Transistor, 20W,100ms Pulse,10 Duty 3.1-3.5 GHz

Features • NPN Silicon Microwave Power Transistors • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic

文件：157.59 Kbytes 页数：2 Pages

MACOM