DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445C) with the common base connected to the flange.

FEATURES

• Suitable for short and medium pulse applications

• Internal input and output matching networks for an easy circuit design

• Emitter ballasting resistors improve ruggedness

• Gold metallization ensures excellent reliability

• Interdigitated emitter-base structure provides high emitter efficiency

• Multicell geometry improves power sharing and reduces thermal resistance.

APPLICATIONS

• Common base class-C pulsed power amplifier for radar applications in the 3.1 to 3.5 GHz range.

BLS3135-10属于分立半导体产品 > 晶体管 - 双极（BJT）- 射频。恩智浦半导体公司制造生产的BLS3135-10晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。