Microwave power LDMOS transistor

General description 100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range. Features ■ Easy power control ■ Integrated ESD protection ■ Excellent ruggedness ■ Excellent thermal stability ■ Designed for broadband ope

文件：80.53 Kbytes 页数：12 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Microwave power LDMOS transistor

恩XP

Package：SOT-502A；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 8DB SOT502A

Ampleon USA Inc.