BLM8G0710S-30PB分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

BLM8G0710S-30PB属于分立半导体产品的晶体管-FETMOSFET-射频。由安谱隆制造生产的BLM8G0710S-30PB晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

General description

The BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state

of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general

purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz.

Available in gull wing or straight lead outline.

Features and benefits

 Designed for broadband operation (frequency 700 MHz to 1000 MHz)

 High section-to-section isolation enabling multiple combinations

 Integrated temperature compensated bias

 Biasing of individual stages is externally accessible

 Integrated ESD protection

 Excellent thermal stability

 High power gain

 On-chip matching for ease of use

 For RoHS compliance see the product details on the Ampleon website

Applications

 RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequency

range. Possible circuit topologies are the following as also depicted in Section 8.1:

 Dual section or single ended

 Doherty

 Quadrature combined

 Push-pull