BLM8AD22S-60ABG分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

BLM8AD22S-60ABG属于分立半导体产品的晶体管-FETMOSFET-射频。由安谱隆制造生产的BLM8AD22S-60ABG晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

General description

The BLM8AD22S-60ABG is a dual section solution using Ampleon’s state of the art GEN8

LDMOS technology. It includes a 45 W 2-stage fully integrated Doherty MMIC in

section A, and a 15 W, 2-stage MMIC in section B, allowing a 3-way 1:2:1 Doherty when

both sections are externally combined. The carrier and peaking devices, input splitter and

output combiner, of the 2-stage fully integrated Doherty MMIC of section A are integrated

in package. This device is perfectly suited as final stage in massive MIMO or small cell

applications in the frequency range from 2100 MHz to 2200 MHz. Available in gull wing.

Features and benefits

 Integrated input splitter in section A

 Integrated output combiner in section A

 Very high efficiency thanks to 3-way Doherty architecture

 Designed for broadband operation (frequency 2100 MHz to 2200 MHz)

 Integrated temperature compensated bias

 Independent control of carrier and peaking bias

 Integrated ESD protection

 Excellent thermal stability

 Source impedance 50 ; high power gain

 For RoHS compliance see the product details on the Ampleon website

Applications

 RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base

stations in the 2100 MHz to 2200 MHz frequency range