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BLM7G1822S-20PBG中文资料LDMOS 2-stage power MMIC数据手册Ampleon规格书

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厂商型号

BLM7G1822S-20PBG

参数属性

BLM7G1822S-20PBG 封装/外壳为SOT-1212-3;包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为分立半导体产品的晶体管-FETMOSFET-射频;产品描述:RF FET LDMOS 65V 32.3DB SOT12121

功能描述

LDMOS 2-stage power MMIC

封装外壳

SOT-1212-3

制造商

Ampleon Ampleon Netherlands B.V.

中文名称

安谱隆

数据手册

下载地址下载地址二

更新时间

2025-9-28 22:59:00

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BLM7G1822S-20PBG规格书详情

描述 Description

The BLM7G1822S-20PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz. Available in gull wing or straight lead outline.

特性 Features

• Designed for broadband operation (frequency 1805 MHz to 2170 MHz)
• High section-to-section isolation enabling multiple combinations
• Integrated temperature compensated bias
• Biasing of individual stages is externally accessible
• Integrated ESD protection
• Excellent thermal stability
• High power gain
• On-chip matching for ease of use
• For RoHS compliance see the product details on the Ampleon website

应用 Application

• RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base stations in the 1805 MHz to 2170 MHz frequency range. Possible circuit topologies are the following:
• Dual section or single ended
• Doherty
• Quadrature combined
• Push-pull

技术参数

  • 制造商编号

    :BLM7G1822S-20PBG

  • 生产厂家

    :Ampleon

  • GP (dB)

    :32.3

  • PL(AV) (W)

    :2.0

  • Die Technology

    :LDMOS

  • VDS (V)

    :28.0

  • ηD (%)

    :23.0

  • PL(1dB) (W)

    :20.0

  • PL(1dB) (dBm)

    :43.0

  • Test Signal

    :1-c W-CDMA

  • Fmin (MHz)

    :1805

  • Fmax (MHz)

    :2170

  • Status

    :Production

  • Matching

    :50Ω I

供应商 型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
7350
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2016+
TO272
3900
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24+
215
现货供应
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恩XP
1380
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恩XP
23+
TO272
8160
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恩XP
2023+
TO272
6895
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恩XP
23+
标准封装
6000
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23+
TO-59
8510
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恩XP
22+
TO272
10730
原装正品
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恩XP
24+
TO272
9600
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