BLM10D1822-61ABG数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The BLM10D1822-61ABG is a 2-stage fully integrated Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver in the frequency range from 1800 MHz to 2200 MHz. Available in gull wing.

特性 Features

• Integrated input splitter
• Integrated output combiner
• High efficiency
• Designed for broadband operation (frequency 1800 MHz to 2200 MHz)
• Integrated temperature compensated bias
• Independent control of carrier and peaking bias
• Integrated ESD protection
• Excellent thermal stability
• Source impedance 50 Ω; high power gain
• For RoHS compliance see the product details on the Ampleon website

应用 Application

• RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base stations in the 1800 MHz to 2200 MHz frequency range

简介

BLM10D1822-61ABG属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLM10D1822-61ABG晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。