BLL8H0514L-130数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHzrange.

特性 Features

Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (0.5 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)

应用 Application

Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range

简介

BLL8H0514L-130属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLL8H0514L-130晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。