NPN EPITAXIAL SILICON RF TRANSISTOR CHIP

Description ▪ NPN epitaxial silicon RF transistor for microwave low-noise amplification Features ▪ Low noise and high gain bandwidth product ▪ High power gain Applications ▪ UHF / VHF wide band amplifier

文件：87.86 Kbytes 页数：2 Pages

Belling

上海贝岭

NPN EPITAXIAL SILICON RF TRANSISTOR CHIP

Belling

上海贝岭

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

文件：102.15 Kbytes 页数：8 Pages

NEC

瑞萨

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • ON-resistance RDS(on)1=120mΩ(typ.) • 4V drive • Halogen free compliance

文件：380.41 Kbytes 页数：4 Pages

SANYO

三洋

Single P-Channel Power MOSFET

Features • On-resistance RDS(on)1=120mΩ (typ) • 4V drive • Halogen free compliance

文件：404.92 Kbytes 页数：5 Pages

ONSEMI

安森美半导体