General description

A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The transistor can deliver 200 W in broadband applications from HF to

860 MHz. The excellent ruggedness and broadband performance of this device makes it

ideal for digital transmitter applications.

Features and benefits

 Integrated ESD protection

 Excellent ruggedness

 High power gain

 High efficiency

 Excellent reliability

 Easy power control

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

Applications

 Transmitter applications in the HF to 860 MHz frequency range

 Industrial applications in the HF to 860 MHz frequency range

 Broadcast transmitters

BLF882S属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。安谱隆半导体（合肥）有限公司制造生产的BLF882S晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。