General description

A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent

ruggedness and broadband performance of this device makes it ideal for digital

transmitter applications.

Features and benefits

 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent

drain current IDq = 0.5 A:

 Peak envelope power load power = 140 W

 Power gain = 21 dB

 Drain efficiency = 49

 Third order intermodulation distortion = 34 dBc

 DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent

drain current IDq = 0.5 A:

 Average output power = 33 W

 Power gain = 21 dB

 Drain efficiency = 34

 Shoulder distance = 33 dBc (4.3 MHz from center frequency)

 Integrated ESD protection

 Excellent ruggedness

 High power gain

 High efficiency

 Excellent reliability

 Easy power control

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 Communication transmitter applications in the UHF band

 Industrial applications in the UHF band

BLF881S属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。安谱隆半导体（合肥）有限公司制造生产的BLF881S晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。