BLF6G38LS-100分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

厂商型号	BLF6G38LS-100
参数属性	BLF6G38LS-100 封装/外壳为SOT-502B；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为分立半导体产品的晶体管-FETMOSFET-射频；产品描述：RF FET LDMOS 65V 13DB SOT502B
功能描述	WiMAX power LDMOS transistor
封装外壳	SOT-502B
文件大小	101.2 Kbytes
页面数量	12 页
生产厂商	恩XP
原厂标识	恩XP
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-5 18:32:00
人工找货	BLF6G38LS-100价格和库存，欢迎联系客服免费人工找货

General description

100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

Features and benefits

■ Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,

sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 probability

on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz

and 3600 MHz, a supply voltage of 28 V and an IDq of 1050 mA:

■ Qualified up to a maximum VDS operation of 32 V

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation

■ Internally matched for ease of use

■ Low gold plating thickness on leads

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to

3600 MHz frequency range