Power LDMOS transistor

General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: ◆ Average output power = 25 W

文件：74.57 Kbytes 页数：9 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Power LDMOS transistor

恩XP

Power LDMOS transistor

文件：90.21 Kbytes 页数：10 Pages

恩XP

Power LDMOS transistor

文件：90.21 Kbytes 页数：10 Pages

PHI

PHI

Package：SOT-502A；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 19DB SOT502A

Ampleon USA Inc.