General description

A 200 W LDMOS RF power transistor for broadcast transmitter and industrial

applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

excellent ruggedness and broadband performance of this device makes it ideal for digital

applications.

Features and benefits

 Integrated ESD protection

 Excellent ruggedness

 High power gain

 High efficiency

 Excellent reliability

 Easy power control

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 Communication transmitter applications in the HF to 1500 MHz frequency range

 Industrial applications in the HF to 1500 MHz frequency range

BLF647P属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。安谱隆半导体（合肥）有限公司制造生产的BLF647P晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。