BLA6H0912LS-1000数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

1000 W LDMOS pulsed power transistor intended for avionics transmitter applications in the 960MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and TACAN.

特性 Features

Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (960 MHz to 1215 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)

应用 Application

1000 W LDMOS pulsed power transistor intended for Mode-S, TCAS, JTIDS, DME and TACANapplications in the 960 MHz to 1215 MHz frequency range

简介

BLA6H0912LS-1000属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLA6H0912LS-1000晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。