BLA6H0912LS-1000分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

BLA6H0912LS-1000属于分立半导体产品的晶体管-FETMOSFET-射频。由安谱隆制造生产的BLA6H0912LS-1000晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

General description

1000W LDMOS pulsed power transistor intended for avionics transmitter applications in

the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and

TACAN.

Features and benefits

 Easy power control

 Integrated ESD protection

 High flexibility with respect to pulse formats

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (960 MHz to 1215 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 1000 W LDMOS pulsed power transistor intended for Mode-S, TCAS, JTIDS, DME

and TACAN applications in the 960 MHz to 1215 MHz frequency range