BLA6G1011-200R分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

General description

200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to

1090 MHz.

Features and benefits

 Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply

voltage of 28 V and an IDq of 100 mA:

 Output power = 200 W

 Power gain = 20 dB

 Efficiency = 65

 Easy power control

 Integrated ESD protection

 Enhanced ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (1030 MHz to 1090 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.