BR101

SINGLEPHASE10AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT10.0Amperes FEATURES *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any

BR101

SINGLE-PHASEBRIDGERECTIFIER

VOLTAGERANGE50to1000VoltsCURRENT10Amperes FEATURES ●Lowcost ●ThisseriesisULrecognizedundercomponentindex,filenumberE127707 ●Highforwardsurgecurrentcapability ●Idealforprintedcircuitboard ●Highisolationvoltagefromcasetoleads ●Hightemperaturesoldering

BR101

SinglePhaseGlassPassivatedSiliconBridgeRectifier

BR101L

SILICONBRIDGERECTIFIERS

BR101L

SILICONBRIDGERECTIFIERS

FEATURES ●Plasticcasewithheatsinkforheatdissipation ●Surgeoverload-240~400Amperespeak ●TheplasticpackagehasULflammabilityclassification94V-0

BR101L

SiliconBridgeRectifiers

BRS101

SINGLE-PHASEBRIDGERECTIFIER

BSH101

N-channelenhancementmodeMOStransistor

DESCRIPTION N-channelenhancementmodeMOStransistorinaSOT23SMDpackage. FEATURES •Verylowthreshold •High-speedswitching •Nosecondarybreakdown •DirectinterfacetoC-MOS,TTLetc. APPLICATIONS •Powermanagement •DCtoDCconverters •Batterypoweredapplications •Glue-l

BSM101

SIMOPACModule(PowermoduleSingleswitchNchannelEnhancementmode)

SIMOPAC®Module VDS=50V ID=200A RDS(on)=3.0mΩ ●Powermodule ●Singleswitch ●Nchannel ●Enhancementmode ●Packagewithinsulatedmetalbaseplate ●Packageoutline/Circuitdiagram:11)

BSM101AR

SIMOPACModule(PowermoduleSingleswitchNchannelEnhancementmode)

SIMOPAC®Module VDS=50V ID=200A RDS(on)=3.0mΩ ●Powermodule ●Singleswitch ●Nchannel ●Enhancementmode ●Packagewithinsulatedmetalbaseplate ●Packageoutline/Circuitdiagram:11)

BSS101

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

•Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V

BT101

DC/DCConverters

BTF101

TNCADAPTER,BULKHEAD,HERMETICALLYSEALED,50OHM

BUJ101A

SiliconDiffusedPowerTransistor

GENERALDESCRIPTION High-voltage,high-speedplanar-passivatednpnpowerswitchingtransistorinTO220ABenvelopeintendedforuseinhighfrequencyelectroniclightingballastapplications,converters,inverters,switchingregulators,motorcontrolsystems,etc.

BUJ101AU

SiliconDiffusedPowerTransistor

GENERALDESCRIPTION High-voltage,high-speedplanar-passivatednpnpowerswitchingtransistorintheI-PAK/SOT533envelopeintendedforuseinhighfrequencyelectroniclightingballastapplications,convertersandinverters,etc.

BUJ101AX

SiliconDiffusedPowerTransistor

GENERALDESCRIPTION High-voltage,high-speedplanar-passivatednpnpowerswitchingtransistorinaplasticfull-packenvelopeintendedforuseinhighfrequencyelectroniclightingballastapplications,converters,inverters,switchingregulators,motorcontrolsystems,etc.

BUZ101

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtratedLowon-resistance)

•Nchannel •Enhancementmode •Avalanche-rated •dv/dtrated •Lowon-resistance •175°Coperatingtemperature •alsoinTO-220SMDavailable

BUZ101

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=29A@TC=25℃ ·DrainSourceVoltage :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

BUZ101L

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-ratedLogicLevel)

•Nchannel •Enhancementmode •Avalanche-rated •LogicLevel •dv/dtrated •Lowon-resistance •175°Coperatingtemperature •alsoinTO-220SMDavailable

BUZ101S

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtrated)

•Nchannel •Enhancementmode •Avalanche-rated •dv/dtrated •175°Coperatingtemperature