丝印：BK2；Package：SMA；400 W Transient Voltage Suppressor

1. General description 400 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 400 W • Reverse standoff

文件：217.72 Kbytes 页数：12 Pages

NEXPERIA

安世

Heterojunction Bipolar Transistor (InGaP HBT)

0--6000 MHz, 18.5 dB 15 dBm InGaP HBT GPA The MMG3008NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to

文件：403.12 Kbytes 页数：14 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

0-6000 MHz, 19 dB 18.5 dBm InGaP HBT GPA The MMG3012NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with freq

文件：423.6 Kbytes 页数：14 Pages

恩XP

Heterojunction Bipolar Transistor (InGaP HBT)

0--6000 MHz, 15 dB 18 dBm InGaP HBT GPA The MMG3009NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6

文件：413.92 Kbytes 页数：14 Pages

恩XP

Heterojunction Bipolar Transistor (InGaP HBT)

0-6000 MHz, 15 dB 17 dBm InGaP HBT The MMG3010NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MH

文件：364.07 Kbytes 页数：15 Pages

恩XP

Heterojunction Bipolar Transistor (InGaP HBT)

0--6000 MHz, 15 dB 15 dBm InGaP HBT GPA The MMG3011NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6

文件：416.05 Kbytes 页数：14 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

0--6000 MHz, 20 dB 20.5 dBm InGaP HBT The MMG3013NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with freque

文件：403.42 Kbytes 页数：15 Pages

恩XP

Heterojunction Bipolar Transistor (InGaP HBT)

0--6000 MHz, 19 dB 16 dBm InGaP HBT GPA The MMG3007NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6

文件：438.37 Kbytes 页数：14 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3H21NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose app

文件：367.91 Kbytes 页数：14 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3001NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is su

文件：388.72 Kbytes 页数：14 Pages

恩XP