型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
丝印:BK2;Package:SMA;400 W Transient Voltage Suppressor 1. General description 400 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 400 W • Reverse standoff 文件:217.72 Kbytes 页数:12 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Heterojunction Bipolar Transistor (InGaP HBT) 0--6000 MHz, 18.5 dB 15 dBm InGaP HBT GPA The MMG3008NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 文件:403.12 Kbytes 页数:14 Pages | 恩XP | 恩XP | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) 0-6000 MHz, 19 dB 18.5 dBm InGaP HBT GPA The MMG3012NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with freq 文件:423.6 Kbytes 页数:14 Pages | 恩XP | 恩XP | ||
Heterojunction Bipolar Transistor (InGaP HBT) 0--6000 MHz, 15 dB 18 dBm InGaP HBT GPA The MMG3009NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6 文件:413.92 Kbytes 页数:14 Pages | 恩XP | 恩XP | ||
Heterojunction Bipolar Transistor (InGaP HBT) 0-6000 MHz, 15 dB 17 dBm InGaP HBT The MMG3010NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MH 文件:364.07 Kbytes 页数:15 Pages | 恩XP | 恩XP | ||
Heterojunction Bipolar Transistor (InGaP HBT) 0--6000 MHz, 15 dB 15 dBm InGaP HBT GPA The MMG3011NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6 文件:416.05 Kbytes 页数:14 Pages | 恩XP | 恩XP | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) 0--6000 MHz, 20 dB 20.5 dBm InGaP HBT The MMG3013NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with freque 文件:403.42 Kbytes 页数:15 Pages | 恩XP | 恩XP | ||
Heterojunction Bipolar Transistor (InGaP HBT) 0--6000 MHz, 19 dB 16 dBm InGaP HBT GPA The MMG3007NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6 文件:438.37 Kbytes 页数:14 Pages | 恩XP | 恩XP | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3H21NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose app 文件:367.91 Kbytes 页数:14 Pages | 恩XP | 恩XP | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3001NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is su 文件:388.72 Kbytes 页数:14 Pages | 恩XP | 恩XP |
详细参数
- 型号:
BK2
- 功能描述:
TVS 二极管 - 瞬态电压抑制器 85volts 5uA 2.9 Amps Bi-Dir
- RoHS:
否
- 制造商:
Vishay Semiconductors
- 极性:
Bidirectional
- 击穿电压:
58.9 V
- 钳位电压:
77.4 V
- 峰值浪涌电流:
38.8 A
- 封装/箱体:
DO-214AB
- 最小工作温度:
- 55 C
- 最大工作温度:
+ 150 C
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TWGMC臺灣迪嘉 |
25+ |
SMA |
36000 |
TWGMC臺灣迪嘉原装现货SMAJ85CA即刻询购立享优惠#长期有排单订 |
询价 | ||
SUNMATE(森美特) |
2019+ROHS |
DO-214AC(SMA) |
66688 |
森美特高品质产品原装正品免费送样 |
询价 | ||
群鑫 |
22+ |
SMA |
30000 |
原装正品 一级代理 |
询价 | ||
24+ |
3000 |
自己现货 |
询价 | ||||
LITTELFU |
09+ |
DO-214AC |
64000 |
绝对全新原装强调只做全新原装现 |
询价 | ||
VISHAY |
24+ |
DO-214AC(SMA |
6868 |
原装现货,可开13%税票 |
询价 | ||
Bourns |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
LITTELFUSE |
23+ |
NA |
25060 |
只做进口原装,终端工厂免费送样 |
询价 | ||
VISHAYMAS |
25+23+ |
DO-214AASMB |
52197 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
VIHSAY |
24+ |
DO-214AC |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
询价 |
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