SiGe:C low-noise amplifier MMIC for LTE

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SiGe:C Low Noise Amplifier MMIC for LTE

The BGU8L1 is, also known as the LTE1001L, a Low-Noise Amplifier (LNA) for LTE receiverapplications, available in a small plastic 6-pin extremely thin leadless package. TheBGU8L1 requires one external matching inductor.\nThe BGU8L1 adapts itself to the changing environment resulting from co-habitati Operating frequency from 728 MHz to 960 MHz\nNoise figure = 0.7 dB\nGain = 14 dB\nHigh input 1 dB compression point of -3 dBm\nHigh in band IP3i of 2 dBm\nSupply voltage 1.5 V to 3.1 V\nSelf-shielding package concept\nIntegrated supply decoupling capacitor\nOptimized performance at a supply current ;

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SiGe:C Low Noise Amplifier MMIC for LTE

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SiGe:C Low Noise Amplifier MMIC for LTE

The BGU8L1UK is a Low Noise Amplifier (LNA) for LTE receiver applications. It comes asan extremely small and thin Wafer Level Chip Scale Package (WLCSP). The BGU8L1UKrequires one external matching inductor.\nThe BGU8L1UK adapts itself to the changing environment resulting from co-habitation ofdiffer Operating frequency from 728 MHz to 960 MHz\nNoise figure (NF) = 0.7 dB\nGain = 16 dB\nHigh input 1 dB compression point of -6 dBm\nHigh in band IP3i of 2 dBm\nSupply voltage 1.5 V to 3.1 V\nSelf shielding package concept\nIntegrated supply decoupling capacitor\nOptimized performance at a supply cur;

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