SiGe:C Low Noise Amplifier MMIC for LTE

The BGU8H1 is, also known as the LTE1001H, a Low-Noise Amplifier (LNA) for LTE receiverapplications, available in a small plastic 6-pin extremely thin leadless package. TheBGU8H1 requires one external matching inductor.\nThe BGU8H1 adapts itself to the changing environment resulting from co-habitati Operating frequency from 2300 MHz to 2690 MHz\nNoise figure = 0.9 dB\nGain 13 dB\nHigh input 1 dB compression point of -1 dBm\nHigh in band IP3i of 8 dBm\nSupply voltage 1.5 V to 3.1 V\nSelf-shielding package concept\nIntegrated supply decoupling capacitor\nOptimized performance at a supply current ;

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SiGe:C low-noise amplifier MMIC for LTE

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SiGe:C Low Noise Amplifier MMIC for LTE

The BGU8H1UK is a Low Noise Amplifier (LNA) for LTE receiver applications. It comes asan extremely small and thin Wafer Level Chip Scale Package (WLCSP). The BGU8H1UKrequires one external matching inductor.\nThe BGU8H1UK adapts itself to the changing environment resulting from co-habitation ofdiffer Operating frequency from 2300 MHz to 2690 MHz\nNoise figure (NF) = 0.9 dB\nGain = 16 dB\nHigh input 1 dB compression point of -5 dBm\nHigh in band IP3i of 3 dBm\nSupply voltage 1.5 V to 3.1 V\nSelf shielding package concept\nIntegrated supply decoupling capacitor\nOptimized performance at a supply c;

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PHILIPS
SMD

PHI

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PHILIPS
LGA

PHI

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