丝印：BGH50N65HS1；Package：TO-247-3；Hybrid SiC Discrete Devices

Features Low VCE(sat) Trench FS Technology High Speed Switching Hybrid SiC Discrete Device Halogen Free, RoHS Complian Applications UPS PV Inverter Welding Machine On-board Charger Totem Pole Bridgeless PFC

文件：2.21197 Mbytes 页数：12 Pages

BASICSEMI

基本半导体

丝印：BGH50N65ZF1；Package：TO-247-4；Hybrid SiC Discrete Devices

Features Low VCE(sat) Trench FS Technology High Speed Switching Hybrid SiC Discrete Device Halogen Free, RoHS Complian Applications UPS PV Inverter Welding Machine On-board Charger Totem Pole Bridgeless PFC

文件：2.28248 Mbytes 页数：12 Pages

BASICSEMI

基本半导体

10-4200 MHz BROADBAND AMPLIFIER

Product Description The BGH7 is a BroadBand, HBT Amplifier that is ideal for applications demanding high linearity in a wideband of 10-4200 MHz. The BGH7 is internally matched to 50 Ohms and requires no external matching components. It is available in RoHS2-compliant SOT363 SMT package. These dev

文件：3.18652 Mbytes 页数：16 Pages

BEREX

丝印：BGH75N120HF1；Package：TO-247-3；Hybrid SiC Discrete Devices

Features Low VCE(sat) Trench FS Technology High Speed Switching Hybrid SiC Discrete Devices Halogen Free, RoHS Complian Applications UPS PV Inverter Welding Machine DC/DC Converters with high Switching frequency

文件：1.35878 Mbytes 页数：12 Pages

BASICSEMI

基本半导体

丝印：BGH75N65HF1；Package：TO-247-3；Hybrid SiC Discrete Devices

Features Low VCE(sat) Trench FS Technology High Speed Switching Hybrid SiC Discrete Devices Halogen Free, RoHS Complian Applications UPS PV Inverter Welding Machine On-board Charger Totem Pole Bridgeless PFC High Frequency Motor Drive

文件：2.82681 Mbytes 页数：12 Pages

BASICSEMI

基本半导体

丝印：BGH75N65HS1；Package：TO-247-3；Hybrid SiC Discrete Devices

Features Low VCE(sat) Trench FS Technology High Speed Switching Hybrid SiC Discrete Device Halogen Free, RoHS Complian Applications UPS PV Inverter Welding Machine On-board Charger Totem Pole Bridgeless PFC

文件：2.00217 Mbytes 页数：12 Pages

BASICSEMI

基本半导体

丝印：BGH75N65ZF1；Package：TO-247-4；Hybrid SiC Discrete Devices

Features Low VCE(sat) Trench FS Technology High Speed Switching Hybrid SiC Discrete Device Halogen Free, RoHS Complian Applications UPS PV Inverter Welding Machine On-board Charger Totem Pole Bridgeless PFC

文件：2.07557 Mbytes 页数：13 Pages

BASICSEMI

基本半导体

混合碳化硅分立器件

基本半导体混合碳化硅分立器件将新型场截止IGBT技术和碳化硅肖特基二极管技术相结合，为硬开关拓扑打造了一个兼顾品质和性价比的方案。该器件将传统的硅基IGBT和碳化硅肖特基二极管合封，在部分应用中可以替代传统的IGBT（硅基IGBT与硅基快恢复二极管合封），使IGBT的开关损耗大幅降低，适用于储能（ESS）、车载充电器（OBC）、不间断电源（UPS）、光伏组串逆变器等领域。

BASiC

基本半导体

熔断器/电流保护器

EATON

伊顿

熔断器/电流保护器

EATON

伊顿