BFU530W数据手册恩XP中文资料规格书

描述 Description

NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323package.
The BFU530W is part of the BFU5 family of transistors, suitable for small signal tomedium power applications up to 2 GHz.

特性 Features

Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
Maximum stable gain 18.5 dB at 900 MHz
11 GHz fT silicon technology

应用 Application

需要高电源电压和高击穿电压的应用
最高可达2 GHz的宽带放大器
面向ISM应用的低噪声放大器
ISM频带振荡器