PNP 4 GHz wideband transistor

DESCRIPTION Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The BFT93W uses the same crystal as the SOT23 version, BFT93. FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATIONS It is intended as a general purpo

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PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

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PNP 4 GHz wideband transistor

文件：1.18945 Mbytes 页数：22 Pages

PHI

PHI

PNP 4 GHz宽频带晶体管

硅PNP晶体管，采用SOT323 (S-mini)塑料封装。BFT93W使用的晶体与采用SOT23封装的BFT93相同。 金属化镀金确保极佳的可靠性\n高功率增益\n小型封装;

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