丝印：RKs；Package：SOT-416；NPN Silicon RF Transistor

NPN Silicon RF Transistor ● For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA ● fT = 9 GHz F = 1.0 dB at 1 GHz

文件：68.44 Kbytes 页数：7 Pages

Infineon

英飞凌

NPN Silicon RF Transistor

NPN Silicon RF Transistor● For low noise, high-gain broadband amplifiers at\n   collector currents from 1 mA to 20 mA\n● fT = 9 GHz\n   F = 1.0 dB at 1 GHz

Infineon

英飞凌

Smart Lowside Power Switch

General Description N channel vertical power FET in Smart SIPMOS® chip on chip technology. Fully protected by embedded protected functions. Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection •

文件：181.6 Kbytes 页数：11 Pages

Infineon

英飞凌

Smart Lowside Power Switch

文件：228.98 Kbytes 页数：11 Pages

Infineon

英飞凌

Programmable 1-PLL VCXO Clock Synthesizer With 1.8-V, 2.5-V, and 3.3-V Outputs

文件：376.95 Kbytes 页数：21 Pages

TI

德州仪器