RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

LOW VOLTAGE CMOS 1:18 CLOCK DISTRIBUTION CHIP

Low Voltage CMOS 1:18 Clock Distribution Chip The MPC909 is a 1:18 low voltage clock distribution chip. The 18 outputs are LVCMOS or LVTTL compatible and feature the drive strength to drive 50Ω series or parallel terminated transmission lines. With output–to–output skews of 250ps, the MPC909

文件：88.11 Kbytes 页数：5 Pages

MOTOROLA

摩托罗拉

Integrated Circuits Operational Amplifier

Description: These devices are monolithic operational amplifiers intended for general–purpose applications. Operation is completely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltages and bias current

文件：27.97 Kbytes 页数：3 Pages

NTE

Integrated Circuits Operational Amplifier

Description: These devices are monolithic operational amplifiers intended for general–purpose applications. Operation is completely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltages and bias current

文件：27.97 Kbytes 页数：3 Pages

NTE