N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance Applications Input- and mixer stages especially VHF TV-tuners.  

文件：119.03 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • High cross modulation performance • Low noise figure • High AGC-range • Low feedback capacitance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Input- and mixer stages especially for

文件：116.09 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • High cross modulation performance • Low noise figure • High AGC-range • Low feedback capacitance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Input- and mixer stages especially for

文件：116.09 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • High cross modulation performance • Low noise figure • High AGC-range • Low feedback capacitance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Input- and mixer stages especially for

文件：116.09 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

文件：133.7 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

N-channel dual-gate MOS-FET

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

文件：35.06 Kbytes 页数：5 Pages

PHI

飞利浦

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features ● Integrated gate protection diodes ● Low noise figure ● Low feedback capacitance ● High cross modulation performance ● Low input capacitance ● High AGC-range Applications Input and mixer stages in UHF tuner.

文件：68.68 Kbytes 页数：5 Pages

Temic

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure)

Silicon N Channel MOSFET Tetrode ● For input stages in UHF TV tuners ● High transconductance ● Low noise figure

文件：135.94 Kbytes 页数：8 Pages

SIEMENS

西门子

N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such a

文件：133.7 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司