BF5030W中文资料RF Mosfet数据手册Infineon规格书

描述 Description

Silicon N-Channel MOSFET Tetrode

特性 Features

·Designed for input stages of UHF- and VHF-tuners with AGC function
·Supporting 5 V operations and power saving 3 V operations
·Integrated ESD gate protection diodes
·Very low noise figure
·High gain, high forward transadmittance
·Very good cross modulation at gain reduction
·Pb-free (RoHS compliant) package
·Qualified according AEC Q101

应用 Application

·Set Top Box
·TV

简介

BF5030W属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BF5030W晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。