Dual Bipolar NPN Devices in a hermetically sealed

Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications Dual Bipolar NPN Devices. VCEO = 160V IC = 0.1A

文件：15.86 Kbytes 页数：1 Pages

SEME-LAB

Bipolar Junction Transistors

TT Electronics

QUAD 2 CHANNEL MULTIPLEXER 3-STATE

DESCRIPTION The 74VHC257 is an advanced high-speed CMOS QUAD 2-CHANNEL MULTIPLEXER (3-STATE) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25°C ■ HIGH NOISE I

文件：315.61 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体