Inductive Sensors

BES M08MI-POC15B-S49G Basic features Approval/Conformity CE UKCA cULus WEEE Basic standard IEC 60947-5-2 Trademark Global

文件：104.78 Kbytes 页数：2 Pages

BALLUFF

巴鲁夫

Built in SBD Dual N-channel Power MOS FET High Speed Power Switching

文件：241.31 Kbytes 页数：11 Pages

RENESAS

瑞萨

300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：155.18 Kbytes 页数：6 Pages

NEC

瑞萨

THYRISTORS

300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR DESCRIPTION The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs with an average on-state current of 300 mA. The repeat peak off-state voltages (and reverse voltages) are 400 and 600 V. FEATURES • 400 and 600 V high-withstanding-voltage series

文件：320.08 Kbytes 页数：8 Pages

RENESAS

瑞萨

Double-Ended Cordsets

BCC M415-M323-3F-300-VX8334-010 Basic features Approval/Conformity CE cULus WEEE

文件：98.75 Kbytes 页数：2 Pages

BALLUFF

巴鲁夫