APC Back-UPS 650

文件：114.07 Kbytes 页数：2 Pages

SCHNEIDER

施耐德

APC Back-UPS 650, Canada

文件：124.67 Kbytes 页数：4 Pages

SCHNEIDER

施耐德

NPN Silicon Germanium RF Transistor

Product Brief The BFP650 is a high linearity wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4 V and currents up to IC = 150 mA. With

文件：209.79 Kbytes 页数：7 Pages

Infineon

英飞凌

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor Preliminary data • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology.

文件：191.16 Kbytes 页数：6 Pages

Infineon

英飞凌

High Linearity Low Noise SiGe:C NPN RF Transistor

文件：1.83564 Mbytes 页数：27 Pages

Infineon

英飞凌