BDW42数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

This series of plastic, medium-powerNPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. The BDW42, BDW46 and BDW47 are complementary devices.

特性 Features

• High DC Current Gain - hFE = 2500 (typ.) @ IC = 5.0 Adc.
• Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min.)BDW46 VCEO(sus) = 100 Vdc (min.) - BDW42/BDW47
• Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc VCE(sat) = 3.0 Vdc (max.) @ IC = 10.0 Adc
• Monolithic Construction with Built-In Base Emitter Shunt resistors
• TO-220AB Compact Package
• Pb-Free Packages are Available

简介

BDW42属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的BDW42晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。