Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 8A TO220

Bourns Inc.

UHF power MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. A marking code showing gate-source voltage (VGS) information is provided for matched pair applications. FEATURES •

文件：117.45 Kbytes 页数：16 Pages

PHI

PHI

UHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the

文件：75.44 Kbytes 页数：12 Pages

PHI

PHI

T-1 3/4 ( f5mm) HIGH POWER AlInGaP LED LAMPs

Description The MVL-544SO utilizes the latest absorbing substrate Aluminum Indium Gallium Phosphide (AlInGaP) LED technology. This LED material has outstanding light output efficiency over a wide range of drive current. The package is T-1 3/4 (5mm) water clear standard type. Features • Ultra -

文件：32.88 Kbytes 页数：2 Pages

UOT

东贝光电