丝印：g；Package：SSON004R1010；Free Time Delay Setting CMOS Voltage Detector (Reset) IC

General Description ROHM's Free Time Delay Setting CMOS Voltage Detector ICs are highly accurate, with ultra-low current consumption feature that uses CMOS process. Delay time setting can be control by an external capacitor. The lineup includes N-channel open drain output (BD52xx NVX-2C) and

文件：1.40163 Mbytes 页数：21 Pages

ROHM

罗姆

Nano Energy™, 车载用，1.6V，灵活设置延迟时间 电压检测器(复位)IC

BD52xxNVX-2C系列是一款采用CMOS工艺的、内置高精度低耗电量延迟电路的CMOS复位IC，延迟时间可通过外置电容器进行设置。Nch漏极开路输出，检测电压为1.4V、1.6V、2.6V～3.1V，步长为0.1V。在从-40℃到125℃的整个工作温度范围内，将延迟时间精度控制在±50%以内。 • AEC-Q100 Qualified (Grade 1)\n• Nano Energy™\n• Delay Time Setting Controlled by External Capacitor\n• Nch Open Drain Output Type\n• Miniature Surface-mount Package;

ROHM

罗姆

Q-Band 4-Stage Driver Amplifier

DESCRIPTION The MGFC5216 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Middle Power Amplifier (MPA) . FEATURES ● RF frequency : 37.0 to 43.0 GHz ● Linear gain : 20dB (TYP.)@ 37 to 40 GHz 20 dB(TYP.) @ 40 to 43 GHz ● P1dB : ³ 16 dBm(min.) @ 37 to 40 GHz ³ 16 dBm(target) @ 40

文件：31.13 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Dual Bias Resistor Trasnsistors

Dual Bias Resistor Trasnsistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digit

文件：179.93 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

文件：179.93 Kbytes 页数：10 Pages

ONSEMI

安森美半导体