BC847CW-G

SmallSignalTransistor

Features -Powerdissipation PCM:0.15W(@TA=25°C) -Collectorcurrent ICM:0.1A -Collector-basevoltage VCBO:BC846W=80V BC847W=50V BC848W=30V

BC847CWQ

NPNGeneralPurposeAmplifier

BC847CW-Q

SMDGeneralPurposeNPNTransistors

BC847CW-Q

45V,100mANPNgeneral-purposetransistors

Featuresandbenefits •General-purposetransistors •SMDplasticpackages •Threedifferentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

BC847CW-TP

NPNGeneralPurposeTransistors

Features •Lowcurrent(max.100mA) •Lowvoltage(max.65V) •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1

BC847DS

45V,100mANPN/NPNgeneral-purposetransistor

Features *Lowcollectorcapacitance *Lowcollector-emittersaturationvoltage *Closelymatchedcurrentgain *Reducesnumberofcomponentsandboardspace *Nomutualinterferencebetweenthetransistors *AEC-Q101qualified

BC847E

GeneralPurposeTransistors

BC847F

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. PNPcomplements:BC856F,BC857FandBC858Fseries. FEATURES •PowerdissipationcomparabletoSOT23 •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitching

BC847F

NPNSiliconTransistor(GeneralpurposeapplicationSwitchingapplication)

Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=45V •ComplementarypairwithBC857F

BC847M

NPNgeneralpurposetransistors

DESCRIPTION NPNgeneralpurposetransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:BC857Mseries. FEATURES •Leadlessultrasmallplasticpackage(1mm×0.6mm×0.5mm) •Boardspace1.3×0.9mm •PowerdissipationcomparabletoSOT23. APPLICATIONS •Generalpu