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BD637

SiliconNPNPowerTransistor

DESCRIPTION •DCCurrentGain-:hFE=40(Min.)@IC=25mA •Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min.) •ComplementtoTypeBD638 APPLICATIONS •Designedforamplifierandswitchingapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BD637

iscSiliconNPNPowerTransistor

DESCRIPTION •DCCurrentGain-:hFE=40(Min.)@IC=25mA •Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min.) •ComplementtoTypeBD638 APPLICATIONS •Designedforamplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

C637

500WATTS(AC)DC/DCSINGLEOUTPUT

Features •SingleOutput •3Ux42TEx166.5mm •Weight:3.5kg

POWERBOX

Powerbox manufactures

C637

AluminumElectrolyticCapacitors

KEMETKEMET Corporation

基美基美公司

CD637

TO-92PlasticPackageTransistors(NPN)

CDIL

Continental Device India Limited

CMN637

764MHzBandRejectFilter

APITECH

API Technologies Corp

CNL637

SILICONPLANAREPITAXIALTRANSISTORS

CDIL

Continental Device India Limited

CTN637

ComplementaryTransistorsinPlasticPackageforDriverStageofAudioAmplifier

CTN635,637,639NPNSILICONPLANAREPITAXIALTRANSISTORS CTN636,638,640PNPSILICONPLANAREPITAXIALTRANSISTORS

CDIL

Continental Device India Limited

DC-637

3.0WATTSINGLE&DUALOUTPUTDC-DCCONVERTERS

INTRONICS

Intronics Power, Inc.

FDC637AN

SingleN-Channel,2.5VSpecifiedPowerTrenchTMMOSFET

GeneralDescription ThisN-Channel2.5VspecifiedMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Thesedeviceshavebeendesigned

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

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