80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：268.81 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：F7；Package：DFN2020D-3；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • Reduced Printed-Circuit Board (PCB) area requirements • Leadless small SMD plastic package with solderable side pads • Exposed heat sink for excellent thermal and electrical conductivity •

文件：265.7 Kbytes 页数：12 Pages

NEXPERIA

安世

Medium power transistors

NPN medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and Side-Wettable Flanks (SWF).\n Table 1. Product overview Type number\n Package\n PNP complement\n BC56PAST-Q\n DFN2020D-3

Nexperia

安世

BGA169

QUALCOMM

高通

上传：深圳市云中傲科技有限公司

BGA169

高通

上传：深圳市赛特兴科技有限公司