SILICON EPITAXIAL NPN TRANSISTOR

文件：163.74 Kbytes 页数：3 Pages

SEME-LAB

Bipolar Junction Transistors

TT Electronics

Low-Power, Wideband, Closed-Loop Buffer

文件：171.42 Kbytes 页数：6 Pages

NSC

国半

Low-Power, Wideband, Closed-Loop Buffer

文件：171.42 Kbytes 页数：6 Pages

NSC

国半

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

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MOSPEC

统懋