Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5 V to 9 V supply voltage. • Withstanding to ESD; Built in ESD absorbin

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Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Built in ESD absorbing

文件：212.42 Kbytes 页数：10 Pages

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Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Build in ESD absorbing

文件：69.59 Kbytes 页数：12 Pages

HitachiHitachi Semiconductor

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Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz) • Wide supply voltage range; Applicable with 5V to 9V supply voltage. • Withstanding to ESD; Built in ESD absorbing

文件：212.42 Kbytes 页数：10 Pages

RENESAS

瑞萨