BAS86-M_V01中文资料威世科技数据手册PDF规格书

FEATURES

• For general purpose applications

• This diode features low turn-on voltage. The

devices are protected by a PN junction guard

ring against excessive voltage, such as

electrostatic discharges

• Metal-on-silicon Schottky barrier device which

is protected by a PN junction guard ring

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,

steering, biasing and coupling diodes for fast switching

and low logic level applications

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Applications where a very low forward voltage is required