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BAS70-04LT1

DualSeriesSchottkyBarrierDiode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. •Ex

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

BAS70-04LT1

SCHOTTKYBARRIERDIODES

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. •Ex

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

BAS70-04LT1

DualSeriesSchottkyBarrierDiode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. Feat

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS70-04LT1G

SchottkyBarrierDiode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitching applications,circuitprotection,andvoltageclamping.Extremelylow forwardvoltagereducesconductionloss.Miniaturesurfacemount packageisexcellentforhandheldandportableapplicationswhere spaceislimited. Featu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS70-04LT1G

SchottkyBarrierDiode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS70-04LT1G

DualSeriesSchottkyBarrierDiode

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS70-04LT1G

DualSeriesSchottkyBarrierDiode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. Feat

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BAS70-04LT1G

DualSeriesSchottkyBarrierDiode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. Feat

ONSEMION Semiconductor

安森美半导体安森美半导体公司

LBAS70-04LT1G

SCHOTTKYBARRIERDIODELowforwardcurrent

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable. WedeclarethatthematerialofproductcompliancewithRoHSrequirements. Features ●Lowforwardcurrent ●Highbreakdownvolta

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

SBAS70-04LT1G

SchottkyBarrierDiode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitching applications,circuitprotection,andvoltageclamping.Extremelylow forwardvoltagereducesconductionloss.Miniaturesurfacemount packageisexcellentforhandheldandportableapplicationswhere spaceislimited. Featu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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