RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Silicon PIN diode

FEATURES  High voltage, current controlled  RF resistor for RF attenuators and switches  Low diode capacitance  Low diode forward resistance  Very low series inductance  For applications up to 3 GHz. APPLICATIONS  RF attenuators and switches. DESCRIPTION Two planar PIN diodes

文件：217.46 Kbytes 页数：8 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Silicon PIN diode

文件：75.39 Kbytes 页数：7 Pages

PHI

PHI

Silicon PIN diode

文件：242.67 Kbytes 页数：7 Pages

恩XP

Silicon PIN diode

文件：71.88 Kbytes 页数：8 Pages

PHI

PHI

Silicon PIN diode

文件：73.26 Kbytes 页数：8 Pages

JMNIC

锦美电子

Silicon PIN diode

文件：73.26 Kbytes 页数：8 Pages

JMNIC

锦美电子