Silicon PIN Diode

Silicon PIN Diode Preliminary Data ● RF switch, RF attenuator for frequencies above 10 MHz ● Very low IM distortion

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SIEMENS

西门子

Silicon PIN Diode

Infineon

英飞凌

CATV amplifier module

DESCRIPTION Hybrid dynamic range amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures exce

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PHI

PHI

Integrated Circuit Low Power, JFET OP Amplifier

Description: The NTE887M is a JFET–input operational amplifier in an 8–Lead DIP type package designed as a low–power version of the NTE857M amplifier. This device features high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. Features: ● Very Low Power Con

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NTE

Integrated Circuit Low Power, JFET OP Amplifier

Description: The NTE887M is a JFET–input operational amplifier in an 8–Lead DIP type package designed as a low–power version of the NTE857M amplifier. This device features high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. Features: ● Very Low Power Con

文件：28.38 Kbytes 页数：3 Pages

NTE